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CHA2069-QDG
RoHS COMPLIANT
18-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package Description
The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multipoint, VSAT) to ISM and military markets. The circuit is manufactured with a standard pHEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in lead-free SMD package.
Gain and NF @ high current config. (BCF grounded)
Main Features
Broadband performance 18-30GHz 3dB noise figure 20dB gain 65 mA Low DC power consumption. 20dBm 3rd order intercept point (high current configuration). 24L-QFN4x4 SMD package
Gain & NF (dB)
24 22 20 18 16 14 12 10 8 6 4 2 0 10 12
Gain
NF
14
16
18
20
22
24
26
28
30
32
Frequency (GHz)
Main Characteristics
Tamb = +25 Vd = +4,5V Pads: VgB, VgC, VgF=GND (H igh current configuration) C, Symbol NF G IP3 Parameter Noise figure, 18-26GHz Gain 3rd order intercept point (Pout/tone=-5dBm) 18-26 GHz 18 20 dBm 17 Min Typ 3 20 Max 4 Unit dB dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA2069QDG6332 - 28 Nov 06 1/18 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2069-QDG
18-30GHz Low Noise Amplifier
Electrical Characteristics (low current configuration)
Tamb = +25 Vd = +4.5V Pads: VgB, VgD, VgE=GND C, Symbol Fop G G NF IS11I IS22I IP3 Parameter Operating frequency range Gain Gain flatness Noise figure ( 18 - 26.5GHz ) Input return loss ( 18 - 26.5GHz ) Ouput return loss ( 18 - 26.5GHz ) 3rd order intercept point (Pout/tone=-5dBm) 18-26GHz P1dB Output power at 1dB gain compression 18-26GHz Id Drain bias current 9.0 10.5 65 dBm mA 16.5 18.5 dBm Min 18 16.5 Typ 19.5 2 3 -5 -7 2.5 4 -3 -3 Max 30 Unit GHz dB dB dB dB dB
These values are representative of onboard measurements as defined on the drawing 95541 (see below). Performances can be optimized thanks to external matching (refer to the "Sub-band enhancement" section below).
Electrical Characteristics (high current configuration)
Tamb = +25 Vd = +4,5V Pads: VgB, VgC, VgF=GND C, Symbol Fop G G NF IS11I IS22I IP3 Parameter Operating frequency range Gain Gain flatness Noise figure ( 18 - 26.5GHz ) Input return loss ( 18 - 26.5GHz ) Ouput return loss ( 18 - 26.5GHz ) 3rd order intercept point (Pout/tone=-5dBm) 18-26 GHz P1dB Output power at 1dB gain compression 18-26 GHz Id Drain bias current 12 13.5 85 dBm mA 18 20 dBm Min 18 17 Typ 20 2 3 -5 -7 2.5 4 -3 -3 Max 30 Unit GHz dB dB dB dB dB
These values are representative of onboard measurements as defined on the drawing 95541 (see below). Performances can be optimized thanks to external matching (refer to the "Sub-band enhancement" section below).
Ref. : DSCHA2069QDG6332 - 28 Nov 06 2/18 Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
18-30GHz Low Noise Amplifier
CHA2069-QDG
Absolute Maximum Ratings (1)
Tamb = +25 C Symbol Vd Pin Rth_BDE Rth_BCF Top Tstg Parameter (1) Drain bias voltage Maximum input power overdrive Thermal Resistance channel to ground paddle (2) Thermal Resistance channel to ground paddle (2) Operating temperature range Storage temperature range Values 5 -7.0 130 120 -40 to +85 -55 to +125 Unit V dBm C/W C/W C C
(1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Thermal resistance for Tamb. = +85 and a Tj max = +175 C C.
Ref. DSCHA2069QDG6332 - 28 Nov 06
3/18
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2069-QDG
18-30GHz Low Noise Amplifier
Typical Package Sij parameters for low current configuration
Tamb = +25 Vd = +4,5V Pads: B, D, E grounded. C,
F (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
S11 dB -0.1 -0.1 -0.1 -0.2 -0.4 -0.6 -1.2 -1.8 -2.8 -4.0 -5.7 -8.8 -15.8 -17.4 -10.9 -8.5 -7.0 -6.2 -5.8 -4.9 -4.7 -4.3 -3.9 -3.8 -3.3 -3.0 -2.5 -2.5 -2.8 -3.9 -2.8
S11 / -58.7 -89.3 -123.5 -160.8 156.1 107.6 58.9 13.5 -26.1 -58.0 -89.1 -122.0 -173.9 24.9 -20.6 -47.1 -65.5 -82.8 -98.4 -110.8 -125.9 -138.7 -152.2 -163.2 -173.7 175.5 166.4 155.4 146.3 144.4 154.3
S12 dB -95.2 -68.8 -63.2 -62.9 -58.1 -67.5 -68.1 -61.6 -60.0 -55.1 -53.4 -49.6 -50.5 -48.2 -48.3 -49.6 -47.3 -44.9 -42.5 -43.2 -45.3 -43.3 -43.7 -44.2 -45.4 -46.5 -43.7 -43.2 -42.0 -46.4 -47.9
S12 / -85.6 63.3 93.4 47.1 11.4 -59.7 93.7 -9.2 -42.6 171.8 87.2 14.1 -42.8 -120.3 171.6 133.4 121.9 92.5 57.3 20.1 14.9 -0.5 -14.8 -36.7 -48.5 -43.8 -45.2 -59.5 -81.7 -112.7 -148.6
S21 dB -57.5 -77.6 -52.9 -37.4 -18.1 -4.4 4.4 9.6 14.7 19.0 21.7 23.3 24.0 23.5 22.4 21.5 20.9 20.8 20.7 20.9 20.9 20.9 20.4 19.6 18.8 17.8 17.1 16.8 17.3 18.0 17.2
S21 / -2.4 -24.4 62.8 145.3 93.6 28.0 -52.1 -122.4 176.1 109.4 41.3 -24.1 -86.8 -146.2 162.0 116.9 75.8 34.2 -6.5 -48.3 -90.8 -135.3 178.7 135.8 92.8 52.7 13.2 -26.3 -69.6 -123.9 168.4
S22 dB -0.6 -0.9 -0.9 -1.3 -1.7 -2.0 -3.0 -3.9 -4.4 -8.3 -13.4 -17.0 -12.6 -8.3 -6.3 -5.9 -5.9 -6.1 -7.2 -7.9 -9.2 -8.7 -7.6 -6.3 -4.4 -3.7 -3.0 -2.7 -2.7 -2.6 -2.5
S22 / -148.4 157.1 112.4 72.0 39.9 8.4 -20.2 -38.6 -69.5 -92.5 -92.8 -67.1 -36.0 -46.7 -65.3 -85.2 -99.8 -116.0 -130.1 -137.3 -142.4 -139.3 -141.9 -148.5 -156.9 -169.0 -179.9 171.2 161.4 156.1 150.5
Refer to the "definition of the Sij reference planes" section below.
Ref. : DSCHA2069QDG6332 - 28 Nov 06
4/18
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
18-30GHz Low Noise Amplifier
Tamb = +25 Vd = +4,5V Pads: B, C, F grounded. C,
CHA2069-QDG
Typical Package Sij parameters for high current configuration
F (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
S11 dB -0.1 -0.1 -0.1 -0.2 -0.4 -0.7 -1.3 -1.8 -2.9 -4.0 -5.6 -8.5 -14.6 -19.5 -11.3 -8.5 -6.9 -6.1 -5.6 -4.6 -4.4 -4.1 -3.7 -3.8 -3.5 -3.3 -3.0 -2.9 -2.9 -3.8 -2.7
S11 / -58.5 -88.9 -122.6 -159.2 158.4 110.4 60.8 13.6 -27.8 -60.9 -92.1 -123.1 -169.0 26.2 -23.8 -49.1 -67.5 -83.9 -97.1 -109.1 -123.2 -135.7 -149.8 -162.0 -173.4 174.4 164.8 153.8 143.4 138.2 145.3
S12 dB -92.2 -67.1 -62.8 -63.0 -56.6 -64.5 -67.3 -61.5 -59.6 -54.4 -53.9 -50.6 -52.1 -50.3 -49.4 -50.9 -46.9 -44.9 -43.0 -44.1 -45.4 -43.9 -43.4 -44.3 -44.5 -47.4 -44.8 -43.6 -41.7 -44.6 -49.9
S12 / 81.8 55.2 100.3 51.4 15.4 -49.7 88.2 -7.6 -45.7 176.7 99.3 22.2 -32.8 -120.6 165.3 132.8 122.6 88.3 53.7 21.4 19.8 7.2 -10.0 -34.6 -42.2 -45.9 -39.0 -43.1 -66.2 -91.4 -140.7
S21 dB -57.9 -69.1 -51.5 -37.2 -17.7 -3.8 5.3 10.6 15.6 19.9 22.7 24.2 25.1 24.8 23.6 22.6 21.8 21.5 21.2 21.3 21.3 21.4 21.0 20.3 19.7 18.7 18.0 17.6 18.0 18.4 17.8
S21 / 0.4 -41.4 77.3 145.1 97.4 31.4 -49.4 -120.9 177.2 110.8 43.0 -22.2 -84.9 -145.6 161.3 115.2 73.8 32.7 -7.8 -48.7 -90.2 -133.4 -178.9 138.4 94.7 53.4 12.8 -27.1 -70.8 -123.8 169.5
S22 dB -0.7 -1.1 -1.0 -1.5 -1.9 -2.2 -3.4 -4.6 -4.8 -8.5 -12.5 -16.3 -13.8 -8.9 -6.5 -6.0 -5.8 -6.1 -7.0 -7.6 -9.0 -9.4 -8.8 -7.6 -5.5 -4.5 -3.6 -3.0 -2.6 -2.6 -2.6
S22 / -146.6 159.3 114.1 73.0 40.1 8.3 -21.8 -40.0 -68.3 -89.9 -90.4 -76.8 -40.8 -46.4 -65.0 -86.1 -101.6 -119.7 -134.2 -144.5 -153.5 -152.7 -151.9 -155.6 -161.7 -172.3 177.3 168.4 158.1 150.7 144.6
Refer to the "definition of the Sij reference planes" section below.
Ref. DSCHA2069QDG6332 - 28 Nov 06
5/18
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2069-QDG
Typical PCB Measured Performance
Tamb = +25 Vd = +4,5V C,
18-30GHz Low Noise Amplifier
Gain / Return losses and NF @ low current config. (BDE grounded)
25 20 S21 15 Gain Rlosses & NF (dB) 10 5 0 -5 -10 -15 -20 -25 10 15 20 Frequency (GHz) 25 30 S22 S11 NF
NF Gain and Rlosses in the package access planes, using the proposed land pattern & board 95541.
Gain / Return losses and NF @ high current config. (BCF grounded)
25 20 15 Gain Rlosses & NF (dB) 10 5 0 -5 -10 -15 -20 -25 10 15 20 Frequency (GHz) 25 30
S22 S11 S21 NF
NF Gain and Rlosses in the package access planes, using the proposed land pattern & board 95541
Ref. : DSCHA2069QDG6332 - 28 Nov 06
6/18
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
18-30GHz Low Noise Amplifier
Typical PCB Measured Performance
Tamb = +25 Vd = +4,5V C,
CHA2069-QDG
Gain and NF @ low current config. (BDE grounded)
24 22 20 18 16 14 12 10 8 6 4 2 0 10 12 14
Gain & NF (dB)
Gain
NF
16
18
20
22
24
26
28
30
32
Frequency (GHz)
NF and Gain in the package access planes, using the proposed land pattern & board 95541
Gain and NF @ high current config. (BCF grounded)
24 22 20 18 16 14 12 10 8 6 4 2 0 10 12
Gain
Gain & NF (dB)
NF
14
16
18
20
22
24
26
28
30
32
Frequency (GHz)
NF and Gain in the package access planes, using the proposed land pattern & board 95541
Ref. DSCHA2069QDG6332 - 28 Nov 06
7/18
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2069-QDG
Typical PCB Measured Performance
Tamb = +25 Vd = +4,5V C,
18-30GHz Low Noise Amplifier
Typical Output 1 dB compression
20 18 16 Ouput P1dB (dBm) 14 12 10 8 6 4 2 0 18 19 20 21 22 Frequency (GHz) 23 24 25 26 low current (BDE grounded) high current (BCFgrounded)
Typical Pout -1dB in the package, using the proposed land pattern & board 95541.
Typical Output IP3 vs Frequency @ Pout/tone=-5 dBm
30 Config. High current (BCF grounded)
25
Output IP3 (dBm)
20 Config. low current (BDE grounded)
15
10
5
0 18 19 20 21 22 Frequency (GHz) 23 24 25 26
Typical Output IP3 in the package, using the proposed land pattern & board 95541.
Ref. : DSCHA2069QDG6332 - 28 Nov 06
8/18
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
18-30GHz Low Noise Amplifier
Typical PCB Measured Performance
Tamb = +25 Vd = +4,5V C,
CHA2069-QDG
Typical C/I3 vs Frequency @ Pout/tone=-5 dBm
60 55 50 45 C/I3 (dB) 40 35 30 25 20 18 19 20 21 22 Frequency (GHz) 23 24 25 26 Config. High current (BCF grounded)
Config. low current (BDE grounded)
Typical C/I3 versus frequency, using the proposed land pattern & board 95541.
Typical C/I3 vs Pout/tone @ high current configuration (BCF grounded)
60 50 40 C/I3 (dB) 30 20 10 0 -10 -5 0 5 Pout/tone(dBm) 10 15
18GHz 20GHz 23GHz 25GHz
Typical C/I3 vs Pout/tone @ low current configuration (BDE grounded)
60 18GHz 50 20GHz 23GHz 40 C/I3 (dB) 25GHz 26GHz 30 20
26GHz
10
0 -10 -5 0 Pout/tone(dBm) 5 10 15
Typical C/I3 versus output power, using the proposed land pattern & board 95541.
Ref. DSCHA2069QDG6332 - 28 Nov 06
9/18
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2069-QDG
Package outline:
18-30GHz Low Noise Amplifier
Matt tin, Lead Free Units From the standard
(Green) mm JEDEC MO-220 25- GND
1- NC 2- NC 3- GND 4- RF in 5- GND 6- NC 7- B 8- C
9- D 10- NC 11- E 12- F 13- NC 14- GND 15- RF out 16- GND
17- NC 18- NC 19- Vd1,2,3 20- Vd1,2,3 21- Vg3 22- Vg2 23- Vg1 24- NC
Ref. : DSCHA2069QDG6332 - 28 Nov 06
10/18
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
18-30GHz Low Noise Amplifier
Definition of the Sij reference planes
CHA2069-QDG
The reference planes are defined from the footprint of the recommended characterization board 95541 shown below. The reference is the symmetrical axis of the package. The input and output reference planes are located at 3.18mm offset (input wise and output wise respec.) from this axis. Then, the given Sij incorporates this land pattern.
3.1 8
3.1 8
Circuit Biasing options
This circuit is self-biased, and flexibility is provided by the access to number of pads. the internal DC electrical schematic is given in order to use these pads in a safe way.
Vg1 Vg2 Vg3 Vd1,2,3
The two requirements are: N Not exceed Vds = 3.5Volt 1: (internal Drain to S ource voltage). N Not biased in such a way that Vgs becomes posi tive. (Internal Gate to Source voltage) 2:
We propose two standard biasing: Low Noise and low consumption:
Vd = 4.5V and B, D, E grounded. All the other pads non connected (NC). Idd = 65mA & Pout-1dB = 10.5dBm Typical. (Equivalent to B, C, D, E, F: non connected and Vd=4.5V; Vg1=Vg2=Vg3=+1.V). Low Noise and higher output power Vd = 4.5V and B, C, F grounded. All the other pads non connected (NC). Idd = 85mA & Pout-1dB = 13.5dBm Typical..
Ref. DSCHA2069QDG6332 - 28 Nov 06
11/18
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2069-QDG
Application note
18-30GHz Low Noise Amplifier
The design of the motherboard has a strong impact on the over all performance since the transition from the motherboard to the package is comparably large. In case of the SMD type packages of United Monolithic Semiconductors the motherboard should be designed according to the information given in the following to achieve good performance. Other configurations are also possible but can lead to different results. If you need advise please contact United Monolithic Semiconductors for further information.
SMD type packages of UMS should allow design and fabrication of micro- and mm-wave modules at low cost. Therefore, a suitable motherboard environment has been chosen. All tests and verifications have been performed on Rogers RO4003. This material exhibits a permittivity of 3.38 and has been used with a thickness of 200m [8 mils] and a 1/2oz or less copper cladding. The corresponding 50Ohm transmission line has a strip width of about 460m [approx. 18 mils].
The contact areas on the motherboard for the package connections should be designed according to the footprint given below. The proper via structure under the ground pad is very important in order to achieve a good RF and lifetime performance. All tests have been done by using a grid of plated through vias with a diameter of less than 300m [12 mils] and a spacing of less than 700m [28 mils] from the centres of two adjacent vias. The via grid should cover the whole space under the ground pad and the vias closest to the RF ports should be located near the edge of the pad to allow a good RF ground connection. Since the vias are important for heat transfer, a proper via filling should be guaranteed during the mounting procedure to get a low thermal resistance between package and heat sink. For power devices the use of heat slugs in the motherboard instead of a grid of via's is recommended.
For the mounting process the SMD type package can be handled as a standard surface mount component. The use of either solder or conductive epoxy is possible. The solder thickness after reflow should be typical 50m [2 mils] and the lateral alignment between the package and the motherboard should be within 50m [2 mils]. Caution should be taken to obtain a good and reliable contact over the whole pad areas. Voids or other improper connections, in particular, between the ground pads of motherboard and package will lead to a deterioration of the RF performance and the heat dissipation. The latter effect can reduce drastically reliability and lifetime of the product.
Ref. : DSCHA2069QDG6332 - 28 Nov 06
12/18
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
18-30GHz Low Noise Amplifier
CHA2069-QDG
(For production, design must be adapted with regard to PCB tolerances and assembly process) Basic footprint for a 24L-QFN4x4 (all units mm) (Please, refer to the UMS propose footprint for optimum operation in the following "Proposed Assembly board" section)
The RF ports are DC blocked on chip. The DC connection (Vd) does not include any decoupling capacitor in package, therefore it is mandatory to provide a good external DC decoupling on the PC board, as close as possible to the package.
SMD mounting procedure
The SMD leadless package has been designed for high volume surface mount PCB assembly process. The dimensions and footprint required for the PCB (motherboard) are given in the drawings above. For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017.
Ref. : DSCHA2069QDG6332 - 28 Nov 06
13/18
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2069-QDG
18-30GHz Low Noise Amplifier
Proposed Assembly board "95941" for the 24L-QFN4x4 products characterization.
Compatible with the proposed footprint. Based on typically Ro4003 / 8mils or equivalent. Using a microstrip to coplanar transition to access the package. Recommended for the implementation of this product on a module board.
-
Ref. : DSCHA2069QDG6332 - 28 Nov 06
14/18
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
18-30GHz Low Noise Amplifier
Sub-band enhancement
CHA2069-QDG
The performances of this product can be enhanced in sub-bands using external matching components such as very simple combination of micro-strip stubs. For some sub-bands, matching networks have been implemented and some typical results are shown below. For further details see the application notes listed below. Matched Sub-band 17-20GHz 21-24GHz 24.5-26.5GHz Application note reference AN0010_CHA2069QDG_17-20 AN0011_CHA2069QDG_21-24 AN0012_CHA2069QDG_24_5-26_5
Of course, based on the Sij matrix given previously, more accurate, or dedicated frequency boards may be derived. The following graphs show S parameters obtained thanks to the external matching networks described in the application notes quoted in the list above.
Typical S parameters with matching network for the 17-20GHz band Config. High current (BCFgrounded)
25 20 S21 15 10 Sij (dB) 5 0 -5 -10 -15 -20 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) S22 S11
Ref. : DSCHA2069QDG6332 - 28 Nov 06
15/18
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2069-QDG
18-30GHz Low Noise Amplifier
Typical S parameters with matching network for the 21-24GHz band Config. High current (BCFgrounded)
25 20 15 10 Sij (dB) 5 0 -5 -10 -15 -20 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Frequency (GHz) S22 S11 S21
Typical S parameters with matching network for the 24.5-26.5GHz band Config. High current (BCFgrounded)
25 20 15 10 Sij (dB) 5 S11 0 -5 -10 -15 -20 21 22 23 24 25 26 27 28 29 30 31 Frequency (GHz) S22 S21
Ref. : DSCHA2069QDG6332 - 28 Nov 06
16/18
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
18-30GHz Low Noise Amplifier
CHA2069-QDG
Ref. : DSCHA2069QDG6332 - 28 Nov 06
17/18
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2069-QDG
18-30GHz Low Noise Amplifier
Ordering Information
QFN 4x4 RoHS compliant package: CHA2069-QDG/XY Stick: XY = 20 Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA2069QDG6332 - 28 Nov 06 18/18 Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

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